Invention Grant
- Patent Title: RF damping structure in inductive device
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Application No.: US16034653Application Date: 2018-07-13
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Publication No.: US11380471B2Publication Date: 2022-07-05
- Inventor: Daniel Daeik Kim , Bonhoon Koo , Babak Nejati
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Qualcomm Incorporated
- Main IPC: H01F27/28
- IPC: H01F27/28 ; H01F17/02 ; H03F1/08 ; H01F17/00 ; H03F3/19 ; H03F3/21
Abstract:
A spiral inductor includes a spiral trace and a plurality of first projections extending along a first edge of the spiral trace. The spiral inductor may further include a plurality of second projections extending along a second edge of the spiral trace, the second edge being opposite the first edge.
Public/Granted literature
- US20200020474A1 RF DAMPING STRUCTURE IN INDUCTIVE DEVICE Public/Granted day:2020-01-16
Information query
