Invention Grant
- Patent Title: High-permeability magnetic-dielectric film-based inductors
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Application No.: US16141168Application Date: 2018-09-25
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Publication No.: US11380472B2Publication Date: 2022-07-05
- Inventor: Srinivas V. Pietambaram , Kristof Darmawikarta , Rahul N. Manepalli
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Schwegman Lundberg & Woessner, P.A.
- Main IPC: H01F5/00
- IPC: H01F5/00 ; H01F27/24 ; H01F27/28 ; H01F27/29 ; H01F41/14 ; H01F27/40 ; H01F27/32

Abstract:
Various embodiments include, for example, a magnetic-dielectric film-based inductor that can be embedded in an electronic package for use as an integrated voltage-regulator, multiple conductive regions to provide electrical interconnects to the magnetic-dielectric-based inductor from other devices, multiple conductive pillars that are electrically coupled to and formed over at least some of the conductive regions, and a magnetic-dielectric layer formed over at least some of conductive regions and conductive pillars. The magnetic-dielectric layer is formed by a multi-layer formation technique having multiple dielectric-material layers and multiple magnetic-material layers. Each of the magnetic-material layers is interspersed with at least one of the dielectric-material layers. Other devices, apparatuses, and methods are described.
Public/Granted literature
- US20200098503A1 HIGH-PERMEABILITY MAGNETIC-DIELECTRIC FILM-BASED INDUCTORS Public/Granted day:2020-03-26
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