Invention Grant
- Patent Title: Plasma processing method and plasma processing apparatus
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Application No.: US17084792Application Date: 2020-10-30
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Publication No.: US11380547B2Publication Date: 2022-07-05
- Inventor: Ryo Terashima , Yuzuru Sakai
- Applicant: Tokyo Electron Limited
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: IPUSA, PLLC
- Priority: JPJP2019-201668 20191106
- Main IPC: H01L21/033
- IPC: H01L21/033 ; H01L21/311 ; H01J37/32 ; H01L21/3213
Abstract:
A plasma processing method of etching an organic film through a mask having an opening is provided. The mask is formed on the organic film, and is made of a silicon-containing film. The method includes rectifying a shape of the mask. The rectifying of the shape of the mask includes refining a side wall of the opening of the mask, and etching an upper surface of the mask.
Public/Granted literature
- US20210134596A1 PLASMA PROCESSING METHOD AND PLASMA PROCESSING APPARATUS Public/Granted day:2021-05-06
Information query
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