Invention Grant
- Patent Title: Method of manufacturing semiconductor structure through multi-implantation to fin structures
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Application No.: US16883955Application Date: 2020-05-26
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Publication No.: US11380548B2Publication Date: 2022-07-05
- Inventor: Chia-Chung Chen , Chung-Hao Chu , Chi-Feng Huang , Victor Chiang Liang
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee Address: TW Hsinchu
- Agency: WPAT, P.C., Intellectual Property Attorneys
- Agent Anthony King
- Main IPC: H01L21/26
- IPC: H01L21/26 ; H01L21/265 ; H01L21/8234 ; H01L29/78 ; H01L29/66
Abstract:
A method of manufacturing a semiconductor structure, comprising providing a substrate; forming a fin structure over the substrate; depositing an insulation material over the fin structure; performing a plurality of ion implantations in-situ with implantation energy increased or decreased stepwise; and removing at least a portion of the insulation material to expose a portion of the fin structure.
Public/Granted literature
- US20210202252A1 SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2021-07-01
Information query
IPC分类:
