Invention Grant
- Patent Title: Semiconductor device and manufacturing method of semiconductor device including a through electrode for connection of wirings
-
Application No.: US16969665Application Date: 2018-12-28
-
Publication No.: US11380584B2Publication Date: 2022-07-05
- Inventor: Takushi Shigetoshi
- Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- Applicant Address: JP Kanagawa
- Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- Current Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- Current Assignee Address: JP Kanagawa
- Agency: Chip Law Group
- Priority: JPJP2018-030632 20180223
- International Application: PCT/JP2018/048399 WO 20181228
- International Announcement: WO2019/163293 WO 20190829
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L21/762 ; H01L23/48 ; H01L23/00 ; H01L27/146 ; H01L21/306 ; H01L21/3065
Abstract:
Damage to a semiconductor device at the time of forming a via hole in which a through electrode is arranged is prevented. The semiconductor device includes a cylindrical insulating film, a front surface side pad, a conductor layer, and a back surface side pad. The cylindrical insulating film is configured in a cylindrical shape penetrating a semiconductor substrate. The front surface side pad is formed adjacent to a front surface of the semiconductor substrate inside the cylindrical insulating film. The conductor layer is arranged adjacent to the front surface side pad and an inner side of the cylindrical insulating film after removing the semiconductor substrate inside the cylindrical insulating film adjacent to the front surface side pad. The back surface side pad is arranged on a back surface of the semiconductor substrate and is connected to the front surface side pad via the conductor layer.
Information query
IPC分类:
