Invention Grant
- Patent Title: Semiconductor test apparatus, semiconductor device test method, and semiconductor device manufacturing method
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Application No.: US16844183Application Date: 2020-04-09
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Publication No.: US11380596B2Publication Date: 2022-07-05
- Inventor: Yuji Ebiike , Takaya Noguchi , Yoshinori Ito , Yoshikazu Ikuta , Koichi Takayama
- Applicant: Mitsubishi Electric Corporation
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Studebaker & Brackett PC
- Priority: JPJP2019-179446 20190930
- Main IPC: H01L21/66
- IPC: H01L21/66 ; G01R31/26

Abstract:
A semiconductor test apparatus includes: a power supply; a high-voltage wire connecting high-voltage terminals of a plurality of semiconductor devices which are objects to be tested to a high-voltage side of the power supply; a low-voltage wire connecting low-voltage terminals of the semiconductor devices to a low-voltage side of the power supply; first switches connected in series to the semiconductor devices respectively, each of the first switches having one end connected to the low-voltage side of the power supply via the low-voltage wire and other end connected to the low-voltage terminal; second switches connected to the semiconductor devices respectively, each of the second switches having one end connected to the high-voltage terminal and other end connected to the low-voltage terminal; and a control circuit controlling the first switches and the second switches.
Public/Granted literature
Information query
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