Invention Grant
- Patent Title: Semiconductor apparatus
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Application No.: US16617307Application Date: 2018-05-28
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Publication No.: US11380600B2Publication Date: 2022-07-05
- Inventor: Heikki Viljanen , Pekka Rantakari , Tauno Vähä-Heikkilä , Esa Tuovinen
- Applicant: Teknologian tutkimuskeskus VTT Oy
- Applicant Address: FI Espoo
- Assignee: Teknologian tutkimuskeskus VTT Oy
- Current Assignee: Teknologian tutkimuskeskus VTT Oy
- Current Assignee Address: FI Espoo
- Agency: Ziegler IP Law Group, LLC
- Priority: FI20175480 20170529
- International Application: PCT/FI2018/050404 WO 20180528
- International Announcement: WO2018/220275 WO 20181206
- Main IPC: H01L23/29
- IPC: H01L23/29 ; H01L23/31 ; H01L49/02 ; H01L21/02
Abstract:
A semiconductor apparatus having a silicon substrate layer at least portion of which is doped with dopants of a conductivity type; and at least one insulator layer formed above the silicon substrate layer, wherein the at least one insulator layer and the dopants of the silicon substrate layer have opposite electric charges.
Public/Granted literature
- US20200152537A1 SEMICONDUCTOR APPARATUS Public/Granted day:2020-05-14
Information query
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