Invention Grant
- Patent Title: Repurposed seed layer for high frequency noise control and electrostatic discharge connection
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Application No.: US16888516Application Date: 2020-05-29
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Publication No.: US11380613B2Publication Date: 2022-07-05
- Inventor: Yue Li , Li-Sheng Weng , Yangyang Sun
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Seyfarth Shaw LLP
- Main IPC: H01L23/50
- IPC: H01L23/50 ; H01L23/00

Abstract:
An integrated circuit (IC) package is described. The IC package includes a die, having a pad layer structure on back-end-of-line layers on a substrate. The die also includes a metallization routing layer on the pad layer structure, and a first under bump metallization layer on the metallization routing layer. The IC package also includes a patterned seed layer on a surface of the die to contact the first under bump metallization layer. The IC package further includes a first package bump on the first under bump metallization layer.
Public/Granted literature
- US20210375742A1 REPURPOSED SEED LAYER FOR HIGH FREQUENCY NOISE CONTROL AND ELECTROSTATIC DISCHARGE CONNECTION Public/Granted day:2021-12-02
Information query
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