Invention Grant
- Patent Title: Die stack structure and manufacturing method thereof
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Application No.: US16903370Application Date: 2020-06-16
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Publication No.: US11380653B2Publication Date: 2022-07-05
- Inventor: Chen-Hua Yu , Hsien-Wei Chen , Ming-Fa Chen , Sung-Feng Yeh , Tzuan-Horng Liu
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: JCIPRNET
- Main IPC: H01L25/065
- IPC: H01L25/065 ; H01L23/538 ; H01L21/768 ; H01L23/31 ; H01L21/56

Abstract:
A die stack structure including a first die, an encapsulant, a redistribution layer and a second die is provided. The encapsulant laterally encapsulates the first die. The redistribution layer is disposed below the encapsulant, and electrically connected with the first die. The second die is disposed between the redistribution layer and the first die, wherein the first and second dies are electrically connected with each other, the second die comprises a body portion having a first side surface, a second side surface and a curved side surface therebetween, and the curved side surface connects the first side surface and the second side surface.
Public/Granted literature
- US20210066254A1 DIE STACK STRUCTURE AND MANUFACTURING METHOD THEREOF Public/Granted day:2021-03-04
Information query
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