Invention Grant
- Patent Title: Semiconductor memory device and manufacturing method of semiconductor memory device
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Application No.: US17166711Application Date: 2021-02-03
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Publication No.: US11380668B2Publication Date: 2022-07-05
- Inventor: Nam Jae Lee
- Applicant: SK hynix Inc.
- Applicant Address: KR Icheon-si
- Assignee: SK hynix Inc.
- Current Assignee: SK hynix Inc.
- Current Assignee Address: KR Icheon-si
- Agency: William Park & Associates Ltd.
- Priority: KR10-2020-0097011 20200803
- Main IPC: H01L25/18
- IPC: H01L25/18 ; H01L27/11582 ; H01L27/11556 ; H01L27/11519 ; H01L27/11524 ; H01L27/11529 ; H01L27/1157 ; H01L27/11573 ; G11C16/24 ; G11C16/08 ; H01L23/00 ; H01L27/11565

Abstract:
A semiconductor device includes: a substrate extending in a first direction and a second direction intersecting with the first direction; a plurality of input/output pads disposed at one side of the substrate; a first circuit adjacent to the input/output pads in the first direction; a second circuit disposed to be spaced farther apart from the input/output pads in the first direction than the first circuit; a first memory cell array overlapping the first circuit; a second memory cell array overlapping the second circuit; first metal source patterns overlapping the first memory cell array and being spaced apart from each other in the second direction; and a second metal source pattern overlapping the second memory cell array and formed to have a width wider than a width of each of the first metal source patterns in the second direction.
Public/Granted literature
- US20220037305A1 SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR MEMORY DEVICE Public/Granted day:2022-02-03
Information query
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