Invention Grant
- Patent Title: Semiconductor memory device and method of manufacturing semiconductor memory device
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Application No.: US17003135Application Date: 2020-08-26
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Publication No.: US11380704B2Publication Date: 2022-07-05
- Inventor: Tomoya Inden
- Applicant: Kioxia Corporation
- Applicant Address: JP Minato-ku
- Assignee: Kioxia Corporation
- Current Assignee: Kioxia Corporation
- Current Assignee Address: JP Minato-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JPJP2020-049442 20200319
- Main IPC: H01L27/1157
- IPC: H01L27/1157 ; H01L21/8238 ; H01L29/423 ; H01L27/11565 ; H01L27/11582 ; H01L29/66 ; H01L29/792 ; H01L27/11573
Abstract:
A semiconductor memory device includes a P-type transistor and a first N-type transistor. The P-type transistor includes a first semiconductor layer containing carbon, a P-type second semiconductor layer provided on the first semiconductor layer, a third semiconductor layer provided on the second semiconductor layer and containing carbon. The first N-type transistor includes a fourth semiconductor layer containing carbon, an N-type fifth semiconductor layer provided on the fourth semiconductor layer, a sixth semiconductor layer provided on the fifth semiconductor layer and containing carbon.
Public/Granted literature
- US20210296327A1 SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR MEMORY DEVICE Public/Granted day:2021-09-23
Information query
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