Invention Grant
- Patent Title: Three dimensional ferroelectric memory
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Application No.: US16558712Application Date: 2019-09-03
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Publication No.: US11380709B2Publication Date: 2022-07-05
- Inventor: Yingda Dong , James Kai , Christopher J. Petti
- Applicant: SANDISK TECHNOLOGIES LLC
- Applicant Address: US TX Addison
- Assignee: SANDISK TECHNOLOGIES LLC
- Current Assignee: SANDISK TECHNOLOGIES LLC
- Current Assignee Address: US TX Addison
- Agency: Vierra Magen Marcus LLP
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L21/00 ; H01L27/11597 ; H01L27/1159 ; G11C11/22 ; H01L29/78 ; H01L29/66 ; H01L29/51 ; H01L29/786
Abstract:
A memory element is provided that includes a portion of a bit line plug, a portion of a source line plug, a portion of a word line, a portion of a vertical semiconductor pillar disposed between the bit line plug, the source line plug and adjacent the word line, and a gate oxide including a ferroelectric material disposed between the vertical semiconductor pillar and the word line.
Public/Granted literature
- US20200075631A1 THREE DIMENSIONAL FERROELECTRIC MEMORY Public/Granted day:2020-03-05
Information query
IPC分类:
