Invention Grant
- Patent Title: Ferroelectric memory device
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Application No.: US16670375Application Date: 2019-10-31
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Publication No.: US11380773B2Publication Date: 2022-07-05
- Inventor: Tsunehiro Ino , Yusuke Higashi , Toshinori Numata , Yuuichi Kamimuta
- Applicant: KIOXIA CORPORATION
- Applicant Address: JP Tokyo
- Assignee: KIOXIA CORPORATION
- Current Assignee: KIOXIA CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JPJP2018-055401 20180323
- Main IPC: H01L29/51
- IPC: H01L29/51 ; H01L27/1159 ; H01L27/11597 ; H01L29/78 ; H01L29/49 ; H01L27/11587
Abstract:
A semiconductor memory device of an embodiment includes a semiconductor layer; a gate electrode including a first portion, a second portion provided to be spaced apart from the first portion, and a spacer provided between the first portion and the second portion; and a first insulating layer provided between the semiconductor layer and the gate electrode and including a first region containing a ferroelectric, a ferrielectric, or an anti-ferroelectric, a second region containing a ferroelectric, a ferrielectric, or an anti-ferroelectric, and a boundary region provided between the first region and the second region. The first region is positioned between the first portion and the semiconductor layer, the second region is positioned between the second portion and the semiconductor layer, the boundary region is positioned between the spacer and the semiconductor layer, and the boundary region has a chemical composition different from that of the spacer.
Public/Granted literature
- US20200066868A1 SEMICONDUCTOR MEMORY DEVICE Public/Granted day:2020-02-27
Information query
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