Invention Grant
- Patent Title: Magnetic memory cell having deterministic switching and high data retention
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Application No.: US16865348Application Date: 2020-05-02
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Publication No.: US11380839B2Publication Date: 2022-07-05
- Inventor: Witold Kula , Marc Drouard , Gilles Gaudin , Jean-Pierre Nozieres
- Applicant: ANTAIOS , Centre National de la Recherche Scientifique , Commissariat à l'Energie Atomique et aux Energies Alternatives
- Applicant Address: FR Meylan; FR Paris; FR Paris
- Assignee: ANTAIOS,Centre National de la Recherche Scientifique,Commissariat à l'Energie Atomique et aux Energies Alternatives
- Current Assignee: ANTAIOS,Centre National de la Recherche Scientifique,Commissariat à l'Energie Atomique et aux Energies Alternatives
- Current Assignee Address: FR Meylan; FR Paris; FR Paris
- Agency: Blank Rome LLP
- Priority: EP19315030 20190506
- Main IPC: H01L43/04
- IPC: H01L43/04 ; H01L27/22 ; H01L43/06
Abstract:
A magnetic memory (MRAM) cell, comprising: a first layer formed from a substantially electrically conductive material; and a magnetic tunnel junction (MTJ) stack formed over the first layer, wherein the MTJ stack comprises: a ferromagnetic reference layer having an in-plane reference magnetization; a tunnel barrier layer; and a ferromagnetic storage layer between the tunnel barrier layer and the first layer, the storage layer having an in-plane storage magnetization; wherein the MTJ stack comprises an arrangement for providing an in-plane uniaxial anisotropy in the storage layer; wherein said in-plane uniaxial anisotropy makes an angle with the direction of the write current that is between 5° and 90°, and wherein said in-plane uniaxial anisotropy has an energy between 40 and 200 kBT and wherein coercivity is larger than 200 Oe.
Information query
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