Invention Grant
- Patent Title: Wideband termination for high power applications
-
Application No.: US16999969Application Date: 2020-08-21
-
Publication No.: US11406008B2Publication Date: 2022-08-02
- Inventor: Omar Eldaiki , Chong Mei
- Applicant: TTM TECHNOLOGIES, INC.
- Applicant Address: US MO St. Louis
- Assignee: TTM TECHNOLOGIES, INC.
- Current Assignee: TTM TECHNOLOGIES, INC.
- Current Assignee Address: US MO St. Louis
- Agency: Polsinelli PC
- Main IPC: H05K1/02
- IPC: H05K1/02

Abstract:
A wideband termination circuit layout is provided for high power applications. The circuit layout may include a dielectric layer having a first surface and a second surface. The circuit layout may also include an input port disposed over the first surface. The circuit layout may further include at least two resistive film patches disposed over the first surface of the dielectric layer and a tuning line between the at least two resistive films disposed over the first surface of the dielectric layer. The at least two resistive film patches are connected in series with the at least one tuning line.
Public/Granted literature
- US20210127482A1 WIDEBAND TERMINATION FOR HIGH POWER APPLICATIONS Public/Granted day:2021-04-29
Information query