Invention Grant
- Patent Title: Bonding pad layer system, gas sensor and method for manufacturing a gas sensor
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Application No.: US16625185Application Date: 2018-06-14
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Publication No.: US11407635B2Publication Date: 2022-08-09
- Inventor: Andreas Scheurle , Bernd Klein , Heinz Nedelmann , Heribert Weber , Isolde Simon , Martin Lapisa , Melissa Delheusy , Michael Knauss , Raschid Baraki , Vitaliy Kondrashov
- Applicant: Robert Bosch GmbH
- Applicant Address: DE Stuttgart
- Assignee: Robert Bosch GmbH
- Current Assignee: Robert Bosch GmbH
- Current Assignee Address: DE Stuttgart
- Agency: Norton Rose Fulbright US LLP
- Agent Gerard Messina
- Priority: DE102017210585.2 20170623
- International Application: PCT/EP2018/065780 WO 20180614
- International Announcement: WO2018/234144 WO 20181227
- Main IPC: B81B7/00
- IPC: B81B7/00 ; B81C1/00 ; G01N27/22 ; G01N33/00 ; H01L23/00

Abstract:
A bonding pad layer system is deposited on a semiconductor chip as a base, for example, a micromechanical semiconductor chip, in which at least one self-supporting dielectric membrane made up of dielectric layers, a platinum conductor track and a heater made of platinum is integrated. In the process, the deposition of a tantalum layer takes place first, upon that the deposition of a first platinum layer, upon that the deposition of a tantalum nitride layer, upon that the deposition of a second platinum layer and upon that the deposition of a gold layer, at least one bonding pad for connecting with a bonding wire being formed in the gold layer. The bonding pad is situated in the area of the contact hole on the semiconductor chip, in which a platinum conductor track leading to the heater is connected using a ring contact and/or is connected outside this area.
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