Invention Grant
- Patent Title: Method for producing metallic ruthenium thin film by atomic layer deposition
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Application No.: US17291446Application Date: 2019-10-28
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Publication No.: US11408069B2Publication Date: 2022-08-09
- Inventor: Akihiro Nishida , Masaki Enzu
- Applicant: ADEKA CORPORATION
- Applicant Address: JP Tokyo
- Assignee: ADEKA CORPORATION
- Current Assignee: ADEKA CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Wenderoth, Lind & Ponack, L.L.P.
- Priority: JPJP2018-210356 20181108
- International Application: PCT/JP2019/042131 WO 20191028
- International Announcement: WO2020/095744 WO 20200514
- Main IPC: C23C16/455
- IPC: C23C16/455 ; C23C16/18
Abstract:
A method of the present invention for producing a metallic ruthenium thin film on a substrate by atomic layer deposition includes: (A) a step of introducing a feedstock gas containing a specific ruthenium compound into a treatment atmosphere, and allowing the ruthenium compound to deposit on the substrate; and a step of introducing a reactive gas containing a specific compound into the treatment atmosphere, and allowing the reactive gas to react with the specific ruthenium compound deposited on the substrate.
Public/Granted literature
- US20220002867A1 METHOD FOR PRODUCING METALLIC RUTHENIUM THIN FILM BY ATOMIC LAYER DEPOSITION Public/Granted day:2022-01-06
Information query
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