Invention Grant
- Patent Title: Method for growth of atomic layer ribbons and nanoribbons of transition metal dichalcogenides
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Application No.: US16912077Application Date: 2020-06-25
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Publication No.: US11408073B2Publication Date: 2022-08-09
- Inventor: Avetik R. Harutyunyan , Xufan Li
- Applicant: HONDA MOTOR CO., LTD.
- Applicant Address: JP Tokyo
- Assignee: HONDA MOTOR CO., LTD.
- Current Assignee: HONDA MOTOR CO., LTD.
- Current Assignee Address: JP Tokyo
- Agency: ArentFox Schiff LLP
- Main IPC: C23C16/30
- IPC: C23C16/30 ; C23C16/54 ; C23C16/56 ; C23C16/02 ; C23C16/40 ; C23F1/00 ; C23C8/12

Abstract:
A method of making an atomic layer nanoribbon that includes forming a double atomic layer ribbon having a first monolayer and a second monolayer on a surface of the first monolayer, wherein the first monolayer and the second monolayer each contains a transition metal dichalcogenide material, oxidizing at least a portion of the first monolayer to provide an oxidized portion, and removing the oxidized portion to provide an atomic layer nanoribbon of the transition metal dichalcogenide material. Also provided are double atomic layer ribbons, double atomic layer nanoribbons, and single atomic layer nanoribbons prepared according to the method.
Public/Granted literature
- US20210324522A1 METHOD FOR GROWTH OF ATOMIC LAYER RIBBONS AND NANORIBBONS OF TRANSITION METAL DICHALCOGENIDES Public/Granted day:2021-10-21
Information query
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