A method of manufacturing an infrared detector includes the steps of: hybrid bonding of a detection chip to a second chip; said hybrid bonding step being carried out by adhesion of contacts and of insulator layers of the two chips; removal of a substrate of said detection chip to reach a deep oxide layer; forming of conductive pads through said deep oxide layer to reach transistors present in a semiconductor layer; and forming of microbolometers suspended over said deep oxide layer and electrically connected to the conductive pads.