Invention Grant
- Patent Title: Through-silicon via detecting circuit, method and integrated circuit having the same
-
Application No.: US17215386Application Date: 2021-03-29
-
Publication No.: US11408929B2Publication Date: 2022-08-09
- Inventor: You-Hsien Lin
- Applicant: Changxin Memory Technologies, Inc.
- Applicant Address: CN Anhui
- Assignee: Changxin Memory Technologies, Inc.
- Current Assignee: Changxin Memory Technologies, Inc.
- Current Assignee Address: CN Anhui
- Agency: Sheppard Mullin Richter & Hampton LLP
- Priority: CN201811367326.2 20181116,CN201821891408.2 20181116
- Main IPC: G01R31/28
- IPC: G01R31/28

Abstract:
A through-silicon via (TSV) detecting circuit, a detecting method, and an integrated circuit having the same are disclosed. The TSV detecting circuit includes: an input circuit including a first switching circuit, the first switching circuit comprising a control terminal coupled to a first detection control signal, a first terminal coupled to a first power signal, and a second terminal coupled to a first terminal of a TSV, wherein the first switching circuit is configured to be turned on in response to the first detection control signal to transmit a first power signal to the first terminal of the TSV; and a comparison circuit comprising a first input coupled to a second terminal of the TSV, and a second input coupled to a reference signal, wherein the comparison circuit is configured to compare a signal of the second terminal of the TSV and the reference signal.
Public/Granted literature
- US20210215755A1 THROUGH-SILICON VIA DETECTING CIRCUIT, METHOD AND INTEGRATED CIRCUIT HAVING THE SAME Public/Granted day:2021-07-15
Information query