Invention Grant
- Patent Title: Method for forming photoresist
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Application No.: US16349269Application Date: 2018-11-20
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Publication No.: US11409195B2Publication Date: 2022-08-09
- Inventor: Wenliang Gong
- Applicant: Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd.
- Applicant Address: CN Wuhan
- Assignee: Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd.
- Current Assignee: Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd.
- Current Assignee Address: CN Wuhan
- Priority: CN201811203935.4 20181016
- International Application: PCT/CN2018/116306 WO 20181120
- International Announcement: WO2020/077730 WO 20200423
- Main IPC: G03F7/039
- IPC: G03F7/039 ; C08G73/18 ; G03F7/40
Abstract:
The present disclosure provides a photoresist. The photoresist is formed by a crosslinking polymerization reaction between a reactive group-containing biimidazole molecule and a nitrogen-containing compound.
Public/Granted literature
- US20200166841A1 PHOTORESIST AND METHOD FOR FORMING SAME Public/Granted day:2020-05-28
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