A memory system includes: a controller including first and second cores; a plurality of channels connected to the controller; a plurality of first memory devices each including first memory blocks allocated to the first core, each of the plurality of channels being coupled to at least one first memory device; and a plurality of second memory devices each including second memory blocks allocated to the second core, each of the plurality of channels being coupled to at least one second memory device, wherein the controller further includes: a global wear leveling manager configured to perform a global wear leveling operation by swapping a first memory block and a second memory block, which are connected to the same channel among the first memory blocks and the second memory blocks, between the first and second cores on the basis of wear levels of the first memory blocks and the second memory blocks.