Invention Grant
- Patent Title: Integrated circuit (IC) power-up testing method and device, and electronic equipment
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Application No.: US17221657Application Date: 2021-04-02
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Publication No.: US11409623B2Publication Date: 2022-08-09
- Inventor: Yangyang Dai
- Applicant: Changxin Memory Technologies, Inc.
- Applicant Address: CN Anhui
- Assignee: Changxin Memory Technologies, Inc.
- Current Assignee: Changxin Memory Technologies, Inc.
- Current Assignee Address: CN Anhui
- Agency: Sheppard Mullin Richter & Hampton LLP
- Priority: CN201811396944.X 20181122
- Main IPC: G06F11/30
- IPC: G06F11/30 ; G06F11/22

Abstract:
An integrated circuit (IC) power-up testing method, an IC power-up testing device, a storage medium and an electronic equipment are disclosed. The IC power-up testing method includes: obtaining power-up testing parameters for an IC; obtaining a plurality of power-up testing waveforms; generating a plurality of power-up test instances by conducting parameter assignments for the power-up testing waveforms based on the power-up testing parameters; and performing power-up tests on the IC using the plurality of power-up test instances. The method allows simulating various IC power-up scenarios through a plurality of power-up test instances.
Public/Granted literature
- US20210224172A1 INTEGRATED CIRCUIT (IC) POWER-UP TESTING METHOD AND DEVICE, AND ELECTRONIC EQUIPMENT Public/Granted day:2021-07-22
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