A magnetoresistive memory device includes a plurality of bottom conductive lines, a plurality of top conductive lines, a first memory cell, and a second memory cell. The top conductive lines are over the bottom conductive lines. The first memory cell is between the bottom conductive lines and the top conductive lines and includes a first magnetic tunnel junction (MTJ) stack. The second memory cell is adjacent the first memory cell and between the bottom conductive lines and the top conductive lines. The second memory cell includes a second MTJ stack, and a top surface of the second MTJ stack is higher than a top surface of the first MTJ stack.