Invention Grant
- Patent Title: Multi-fuse memory cell circuit and method
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Application No.: US17378923Application Date: 2021-07-19
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Publication No.: US11410740B2Publication Date: 2022-08-09
- Inventor: Meng-Sheng Chang , Chia-En Huang , Shao-Yu Chou , Yih Wang
- Applicant: Taiwan Semiconductor Manufacturing Company Limited
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company Limited
- Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
- Current Assignee Address: TW Hsinchu
- Agency: Jones Day
- Main IPC: G11C17/00
- IPC: G11C17/00 ; G11C17/16 ; H01L23/528 ; H01L27/112 ; G11C17/18 ; H01L23/525

Abstract:
A multi-fuse memory cell is disclosed. The circuit includes: a first fuse element electrically coupled to a first transistor, a gate of the first transistor is electrically coupled to a first selection signal; a second fuse element electrically coupled to a second transistor, a gate of the second transistor is electrically coupled to a second selection signal, both the first transistor and the second transistor are grounded; and a programming transistor electrically coupled to the first fuse element and the second fuse element, wherein a gate of the programming transistor is electrically coupled to a programming signal.
Public/Granted literature
- US20210343354A1 Multi-Fuse Memory Cell Circuit and Method Public/Granted day:2021-11-04
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