Invention Grant
- Patent Title: Substrate processing method
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Application No.: US17253789Application Date: 2019-06-13
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Publication No.: US11410834B2Publication Date: 2022-08-09
- Inventor: Keiichi Tanaka , Tatsuo Matsudo
- Applicant: Tokyo Electron Limited
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Nath, Goldberg & Meyer
- Agent Jerald L. Meyer
- Priority: JPJP2018-122164 20180627
- International Application: PCT/JP2019/023407 WO 20190613
- International Announcement: WO2020/004048 WO 20200102
- Main IPC: H01L21/306
- IPC: H01L21/306 ; H01J37/32 ; C23C14/06 ; C23C14/10 ; C23C14/22 ; H01L21/02 ; H01L21/285

Abstract:
A substrate processing apparatus of the present disclosure includes a processing container capable of being vacuum-exhausted, a lower electrode, and an upper electrode. A target substrate can be placed on the lower electrode. The upper electrode is disposed in the processing container so as to face the lower electrode. A substrate processing method of the present disclosure includes performing a first process on the target substrate using an AC voltage without using a DC pulse voltage, and performing a second process on the target substrate using the DC pulse voltage.
Public/Granted literature
- US20210280394A1 SUBSTRATE PROCESSING METHOD Public/Granted day:2021-09-09
Information query
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