Invention Grant
- Patent Title: Method of forming semiconductor device having a dual material redistribution line and semiconductor device
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Application No.: US17063012Application Date: 2020-10-05
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Publication No.: US11410882B2Publication Date: 2022-08-09
- Inventor: Anhao Cheng , Chun-Chang Liu
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Hauptman Ham, LLP
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L23/48 ; H01L23/00 ; H01L23/522 ; H01L23/525 ; H01L21/304
Abstract:
A method of making a semiconductor device includes depositing a second conductive material over a first conductive material, wherein the second conductive material is different from the first conductive material, and the second conductive material defines a redistribution line (RDL). The method further includes depositing a passivation layer over the RDL, wherein depositing the passivation layer comprises forming a plurality of convex sidewalls, and each of the plurality of convex sidewalls extends beyond an edge of the RDL.
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