Invention Grant
- Patent Title: Semiconductor device comprising a capacitor
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Application No.: US17107552Application Date: 2020-11-30
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Publication No.: US11410922B2Publication Date: 2022-08-09
- Inventor: Ryoichi Kato , Yoshinari Ikeda , Yuma Murata
- Applicant: FUJI ELECTRIC CO., LTD.
- Applicant Address: JP Kawasaki
- Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee Address: JP Kawasaki
- Agency: Rabin & Berdo, P.C.
- Priority: JPJP2019-237613 20191227
- Main IPC: H01L23/522
- IPC: H01L23/522 ; H01L23/49

Abstract:
A capacitor includes a case including a capacitor element, a first connection terminal, a second connection terminal, and a second insulating sheet formed between the first connection terminal and the second connection terminal, and the first connection terminal, the second insulating sheet, and the second connection terminal extend to the outside from the case. A semiconductor module includes a multi-layer terminal portion in which a first power terminal, a first insulating sheet, and a second power terminal are sequentially stacked. The first power terminal includes a first bonding area electrically connected to the first connection terminal, and the second power terminal includes a second bonding area electrically connected to the second connection terminal. The first insulating sheet includes a terrace portion that extends in a direction from the second bonding area towards the first bonding area in a planar view.
Public/Granted literature
- US20210202372A1 SEMICONDUCTOR DEVICE Public/Granted day:2021-07-01
Information query
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