Invention Grant
- Patent Title: Semiconductor device and method of manufacture
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Application No.: US16573630Application Date: 2019-09-17
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Publication No.: US11410929B2Publication Date: 2022-08-09
- Inventor: Fong-yuan Chang , Noor Mohamed Ettuveettil , Po-Hsiang Huang , Sen-Bor Jan , Ming-Fa Chen , Chin-Chou Liu , Yi-Kan Cheng
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- Main IPC: H01L23/528
- IPC: H01L23/528 ; H01L23/522 ; H01L23/00
Abstract:
Semiconductor devices and methods of manufacture are provided wherein a metallization layer is located over a substrate, and a power grid line is located within the metallization layer. A signal pad is located within the metallization layer and the signal pad is surrounded by the power grid line. A signal external connection is electrically connected to the signal pad.
Public/Granted literature
- US20210082816A1 Semiconductor Device and Method of Manufacture Public/Granted day:2021-03-18
Information query
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