A memory device, and a method of making the same, includes a resistive random-access memory element electrically connected to an extrinsic base region of a bipolar junction transistor, the extrinsic base region of the bipolar junction transistor consisting of an epitaxially grown material that forms the bottom electrode of the resistive random-access memory element. Additionally, a method of writing to the memory device includes applying a first voltage on a word line of the memory device to form a filament in the resistive random-access memory element. A second voltage including an opposite polarity to the first voltage can be applied to the word line to remove a portion of the filament in the resistive random-access memory element.