Invention Grant
- Patent Title: LOCOS with sidewall spacer for different capacitance density capacitors
-
Application No.: US16897373Application Date: 2020-06-10
-
Publication No.: US11411070B2Publication Date: 2022-08-09
- Inventor: Henry Litzmann Edwards
- Applicant: Texas Instruments Incorporated
- Applicant Address: US TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: US TX Dallas
- Agent Krista Y. Chan; Charles A. Brill; Frank D. Cimino
- Main IPC: H01L49/02
- IPC: H01L49/02 ; H01L21/311 ; H01L21/3205 ; H01L21/762 ; H01L29/92 ; H01L21/32 ; H01L27/08 ; H01L29/94

Abstract:
An integrated circuit (IC) includes a first capacitor, a second capacitor, and functional circuitry configured together with the capacitors for realizing at least one circuit function in a semiconductor surface layer on a substrate. The capacitors include a top plate over a LOCal Oxidation of Silicon (LOCOS) oxide, wherein a thickness of the LOCOS oxide for the second capacitor is thicker than a thickness of the LOCOS oxide for the first capacitor. There is a contact for the top plate and a contact for a bottom plate for the first and second capacitors.
Public/Granted literature
- US20200303491A1 LOCOS WITH SIDEWALL SPACER FOR DIFFERENT CAPACITANCE DENSITY CAPACITORS Public/Granted day:2020-09-24
Information query
IPC分类: