Invention Grant
- Patent Title: Technologies using nitrogen-functionalized pseudo-graphite
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Application No.: US16292323Application Date: 2019-03-05
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Publication No.: US11415540B2Publication Date: 2022-08-16
- Inventor: Nolan Nicholas , Ignatius Cheng , Haoyu Zhu , Humayun Kabir , Kailash Hamal , Jeremy May
- Applicant: ABB Schweiz AG , University of Idaho
- Applicant Address: CH Baden; US ID Moscow
- Assignee: ABB Schweiz AG,University of Idaho
- Current Assignee: ABB Schweiz AG,University of Idaho
- Current Assignee Address: CH Baden; US ID Moscow
- Agency: Armstrong Teasdale LLP
- Main IPC: G01N27/30
- IPC: G01N27/30 ; H01M4/90
Abstract:
Methods, electrodes, and electrochemical devices using nitrogen-doped pseudo-graphite are disclosed. In one illustrative embodiment, a method may include doping a pseudo-graphite material with nitrogen to form a doped pseudo-graphite material. The method may also include applying the doped pseudo-graphite material to a surface of a substrate of an electrode.
Public/Granted literature
- US20200284750A1 Technologies Using Nitrogen-Functionalized Pseudo-Graphite Public/Granted day:2020-09-10
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