Invention Grant
- Patent Title: Field-biased second harmonic generation metrology
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Application No.: US16703709Application Date: 2019-12-04
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Publication No.: US11415617B2Publication Date: 2022-08-16
- Inventor: Viktor Koldiaev , Marc Kryger , John Changala
- Applicant: FemtoMetrix, Inc.
- Applicant Address: US CA Irvine
- Assignee: FemtoMetrix, Inc.
- Current Assignee: FemtoMetrix, Inc.
- Current Assignee Address: US CA Irvine
- Agency: Knobbe, Martens, Olson & Bear, LLP
- Main IPC: G01R29/24
- IPC: G01R29/24 ; G01N21/63 ; G01N21/88 ; G01N21/94 ; G01N21/95 ; G01N27/00 ; H01L21/66 ; G01R31/26 ; G01R31/265 ; G01R31/28 ; G01R31/308

Abstract:
Various approaches can be used to interrogate a surface such as a surface of a layered semiconductor structure on a semiconductor wafer. Certain approaches employ Second Harmonic Generation and in some cases may utilize pump and probe radiation. Other approaches involve determining current flow from a sample illuminated with radiation. Decay constants can be measured to provide information regarding the sample. Additionally, electric and/or magnetic field biases can be applied to the sample to provide additional information.
Public/Granted literature
- US11092637B2 Field-biased second harmonic generation metrology Public/Granted day:2021-08-17
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