Invention Grant
- Patent Title: Lithographic patterning process and resists to use therein
-
Application No.: US16512558Application Date: 2019-07-16
-
Publication No.: US11415886B2Publication Date: 2022-08-16
- Inventor: Sander Frederik Wuister , Oktay Yildirim , Gijsbert Rispens , Alexey Olegovich Polyakov
- Applicant: ASML Netherlands B.V.
- Applicant Address: NL Veldhoven
- Assignee: ASML Netherlands B.V.
- Current Assignee: ASML Netherlands B.V.
- Current Assignee Address: NL Veldhoven
- Agency: Sterne, Kessler, Goldstein & Fox P.L.L.C.
- Priority: EP14200085 20141223,EP15165023 20150424
- Main IPC: G03F7/004
- IPC: G03F7/004 ; G03F7/039 ; G03F7/20 ; G03F7/16 ; G03F7/30 ; G03F7/00
Abstract:
A resist composition is disclosed which comprises a perovskite material with a structure having a chemical formula selected from ABX3, A2BX4, or ABX4, wherein A is a compound containing an NH3 group, B is a metal and X is a halide constituent. The perovskite material may comprise one or more of the following components: halogen-mixed perovskite material; metal-mixed perovskite material, and organic ligand mixed perovskite material.
Public/Granted literature
- US20190339615A1 Lithographic Patterning Process and Resists to Use Therein Public/Granted day:2019-11-07
Information query
IPC分类:
