Invention Grant
- Patent Title: Methods of forming high aspect ratio openings and methods of forming high aspect ratio features
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Application No.: US17155770Application Date: 2021-01-22
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Publication No.: US11417565B2Publication Date: 2022-08-16
- Inventor: Ken Tokashiki , John A. Smythe , Gurtej S. Sandhu
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: TraskBritt
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L21/3065 ; H01L21/762 ; H01L21/311
Abstract:
Methods of forming high aspect ratio openings. The method comprises removing a portion of a dielectric material at a temperature less than about 0° C. to form at least one opening in the dielectric material. The at least one opening comprises an aspect ratio of greater than about 30:1. A protective material is formed in the at least one opening and on sidewalls of the dielectric material at a temperature less than about 0° C. Methods of forming high aspect ratio features are also disclosed, as are semiconductor devices.
Public/Granted literature
- US20210143055A1 METHODS OF FORMING HIGH ASPECT RATIO OPENINGS AND METHODS OF FORMING HIGH ASPECT RATIO FEATURES Public/Granted day:2021-05-13
Information query
IPC分类:
