Invention Grant
- Patent Title: Three-dimensional stacking structure and manufacturing method thereof
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Application No.: US16787031Application Date: 2020-02-11
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Publication No.: US11417629B2Publication Date: 2022-08-16
- Inventor: Ming-Fa Chen , Sung-Feng Yeh , Tzuan-Horng Liu , Chao-Wen Shih
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: JCIPRNET
- Main IPC: H01L25/065
- IPC: H01L25/065 ; H01L23/48 ; H01L23/00 ; H01L23/31 ; H01L21/78 ; H01L21/56 ; H01L25/00

Abstract:
A stacking structure including a first die, a second die stacked on the first die, and a third die and a fourth die disposed on the second die. The first die has a first metallization structure, and the first metallization structure includes first through die vias. The second die has a second metallization structure, and second metallization structure includes second through die vias. The first through die vias are bonded with the second through die vias, and sizes of the first through die vias are different from sizes of the second through die vias. The third and fourth dies are disposed side-by-side and are bonded with the second through die vias.
Public/Granted literature
- US20210249380A1 THREE-DIMENSIONAL STACKING STRUCTURE AND MANUFACTURING METHOD THEREOF Public/Granted day:2021-08-12
Information query
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