Invention Grant
- Patent Title: Thin film transistor and method for manufacturing same, array substrate, display panel and display device
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Application No.: US16063743Application Date: 2017-12-12
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Publication No.: US11417769B2Publication Date: 2022-08-16
- Inventor: Binbin Cao , Chao Wang , Lin Sun
- Applicant: BOE Technology Group Co., Ltd. , Hefei Xinsheng Optoelectronics Technology Co., Ltd.
- Applicant Address: CN Beijing; CN Hefei
- Assignee: BOE Technology Group Co., Ltd.,Hefei Xinsheng Optoelectronics Technology Co., Ltd.
- Current Assignee: BOE Technology Group Co., Ltd.,Hefei Xinsheng Optoelectronics Technology Co., Ltd.
- Current Assignee Address: CN Beijing; CN Hefei
- Agency: Fay Sharpe LLP
- Priority: CN201710329780.8 20170511
- International Application: PCT/CN2017/115638 WO 20171212
- International Announcement: WO2018/205596 WO 20181115
- Main IPC: H01L29/786
- IPC: H01L29/786 ; H01L21/02 ; H01L21/467 ; H01L27/12 ; H01L29/66

Abstract:
Provided are a thin film transistor and method for manufacturing the same, array substrate, display panel and display device. The thin film transistor includes: a gate pattern, a gate insulating layer, an active layer pattern, a source pattern and a drain pattern sequentially stacked. At least one of a surface of the source pattern facing the gate insulating layer, a surface of the drain pattern facing the gate insulating layer, and a surface of the gate pattern facing the gate insulating layer is a target surface which can diffusely reflect lights entering the target surface, to prevent part of the lights from entering the active layer pattern. The display device solves the problem of volt-ampere characteristic curve of the active layer pattern being deflected and a normal operation of the thin film transistor being affected, thereby weakening the influence of lights on the normal operation of the thin film transistor.
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