Invention Grant
- Patent Title: Dual-band transformer structure
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Application No.: US16874858Application Date: 2020-05-15
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Publication No.: US11418223B2Publication Date: 2022-08-16
- Inventor: Tzu-Hao Hsieh , Chih-Chieh Wang
- Applicant: Realtek Semiconductor Corporation
- Applicant Address: TW Hsinchu
- Assignee: Realtek Semiconductor Corporation
- Current Assignee: Realtek Semiconductor Corporation
- Current Assignee Address: TW Hsinchu
- Agency: Locke Lord LLP
- Agent Tim Tingkang Xia, Esq.
- Priority: TW108128988 20190814
- Main IPC: H04B1/00
- IPC: H04B1/00 ; H03H7/46

Abstract:
The present disclosure provides a dual-band transformer structure, which is suitable for at least two frequencies. The dual-band transformer structure includes a metal layer, a first transmission line, a second transmission line, and a third transmission line. The first transmission line and the second transmission line are disposed on the metal layer. A first end of the second transmission line is coupled to a second end of the first transmission line. A second end of the second transmission line is aligned with an edge of the metal layer, and a first end of the third transmission line is coupled to the second end of the second transmission line. The third transmission line extends away from the edge.
Public/Granted literature
- US20210050871A1 DUAL-BAND TRANSFORMER STRUCTURE Public/Granted day:2021-02-18
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