Invention Grant
- Patent Title: Three-dimensional semiconductor fabrication
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Application No.: US16498960Application Date: 2018-03-30
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Publication No.: US11421338B2Publication Date: 2022-08-23
- Inventor: Gregory Nolan Nielson
- Applicant: Nielson Scientific, LLC
- Applicant Address: US UT Lehi
- Assignee: Nielson Scientific, LLC
- Current Assignee: Nielson Scientific, LLC
- Current Assignee Address: US UT Lehi
- Agency: Calfee, Halter & Griswold LLP
- International Application: PCT/US2018/025428 WO 20180330
- International Announcement: WO2018/183867 WO 20181004
- Main IPC: C25F3/12
- IPC: C25F3/12 ; B81C1/00 ; H01L21/268 ; H01L21/67 ; C25F7/00 ; H01L21/3063 ; H01L29/16
Abstract:
Various technologies are described herein pertaining to electrochemical etching of a semiconductor controlled by way of a laser that emits light with an energy below a bandgap energy of the semiconductor.
Public/Granted literature
- US20210104410A1 THREE-DIMENSIONAL SEMICONDUCTOR FABRICATION Public/Granted day:2021-04-08
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