Invention Grant
- Patent Title: Semiconductor devices including through electrodes
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Application No.: US16707844Application Date: 2019-12-09
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Publication No.: US11422181B2Publication Date: 2022-08-23
- Inventor: Chang Hyun Kim
- Applicant: SK hynix Inc.
- Applicant Address: KR Icheon-si
- Assignee: SK hynix Inc.
- Current Assignee: SK hynix Inc.
- Current Assignee Address: KR Icheon-si
- Agency: William Park & Associates Ltd.
- Priority: KR10-2019-0082903 20190709
- Main IPC: G01R31/26
- IPC: G01R31/26 ; H01L25/065

Abstract:
A semiconductor device includes a first semiconductor chip and a second semiconductor chip stacked on the first semiconductor chip and electrically connected to the first semiconductor chip by a first through electrode and a second through electrode. The first semiconductor chip may electrically connect the first through electrode to a third test resistor during a second test operation. The first semiconductor chip may detect a voltage level of the first internal node, which is determined by resistance values of the third test resistor and the first and second through electrodes, to test a short failure between the first and second through electrodes during the second test operation.
Public/Granted literature
- US20210011074A1 SEMICONDUCTOR DEVICES INCLUDING THROUGH ELECTRODES Public/Granted day:2021-01-14
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