Invention Grant
- Patent Title: Memory devices and methods which may facilitate tensor memory access
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Application No.: US17150675Application Date: 2021-01-15
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Publication No.: US11422929B2Publication Date: 2022-08-23
- Inventor: Fa-Long Luo , Jaime Cummins , Tamara Schmitz , Jeremy Chritz
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Dorsey & Whitney LLP
- Main IPC: G06F12/02
- IPC: G06F12/02 ; G06F12/0893 ; G06F12/0864 ; G06F12/06

Abstract:
Methods, apparatuses, and systems for tensor memory access are described. Multiple data located in different physical addresses of memory may be concurrently read or written by, for example, employing various processing patterns of tensor or matrix related computations. A memory controller, which may comprise a data address generator, may be configured to generate a sequence of memory addresses for a memory access operation based on a starting address and a dimension of a tensor or matrix. At least one dimension of a tensor or matrix may correspond to a row, a column, a diagonal, a determinant, or an Nth dimension of the tensor or matrix. The memory controller may also comprise a buffer configured to read and write the data generated from or according to a sequence of memory of addresses.
Public/Granted literature
- US20210165732A1 MEMORY DEVICES AND METHODS WHICH MAY FACILITATE TENSOR MEMORY ACCESS Public/Granted day:2021-06-03
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