Invention Grant
- Patent Title: Generating embedded data in memory cells in a memory sub-system
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Application No.: US17086964Application Date: 2020-11-02
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Publication No.: US11423989B2Publication Date: 2022-08-23
- Inventor: Bruce A. Liikanen , Michael Sheperek , Larry J. Koudele
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Lowenstein Sandler LLP
- Main IPC: G11C16/10
- IPC: G11C16/10 ; G11C16/26 ; G06F3/06 ; G11C11/56 ; G11C16/04
Abstract:
A processing device establishes a first data group of memory cells of a memory sub-system and a second data group of memory cells of the memory sub-system. A first portion of the first data group is programmed at a threshold voltage level to set a first embedded data value. A second portion of the second data group of memory cells is programmed at the threshold voltage level offset by an offset voltage level to set a second embedded data value.
Public/Granted literature
- US20220139460A1 GENERATING EMBEDDED DATA IN MEMORY CELLS IN A MEMORY SUB-SYSTEM Public/Granted day:2022-05-05
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