Invention Grant
- Patent Title: Semiconductor device and manufacturing method thereof
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Application No.: US16787952Application Date: 2020-02-11
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Publication No.: US11424255B2Publication Date: 2022-08-23
- Inventor: Ming-Chyi Liu , Chih-Ren Hsieh , Sheng-Chieh Chen
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Maschoff Brennan
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L27/11521 ; H01L21/28 ; H01L21/762 ; H01L21/311 ; H01L29/423 ; H01L21/3213 ; H01L21/3105 ; H01L29/788
Abstract:
A semiconductor device includes a substrate, an isolation feature, a floating gate, and a control gate. The substrate has a protruding portion. The isolation feature surrounds the protruding portion of the substrate. The floating gate is over the protruding portion of the substrate, in which a sidewall of the floating gate is aligned with a sidewall of the protruding portion of the substrate. The control gate is over the floating gate.
Public/Granted literature
- US20210249429A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2021-08-12
Information query
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