Invention Grant
- Patent Title: Semiconductor structure and method of fabricating the same
-
Application No.: US16901010Application Date: 2020-06-15
-
Publication No.: US11428870B2Publication Date: 2022-08-30
- Inventor: Feng-Wei Kuo , Wen-Shiang Liao
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: JCIPRNET
- Main IPC: G02B6/34
- IPC: G02B6/34 ; G02B6/124 ; G02B6/13 ; H01L21/02

Abstract:
A semiconductor structure including a semiconductor substrate, a first patterned dielectric layer, a grating coupler and a waveguide is provided. The semiconductor substrate includes an optical reflective layer. The first patterned dielectric layer is disposed on the semiconductor substrate and covers a portion of the optical reflective layer. The grating coupler and the waveguide are disposed on the first patterned dielectric layer, wherein the grating coupler and the waveguide are located over the optical reflective layer.
Public/Granted literature
- US20210389526A1 SEMICONDUCTOR STRUCTURE AND METHOD OF FABRICATING THE SAME Public/Granted day:2021-12-16
Information query