Invention Grant
- Patent Title: Method for manufacturing semiconductor device
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Application No.: US17115496Application Date: 2020-12-08
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Publication No.: US11429019B2Publication Date: 2022-08-30
- Inventor: Wei-Chung Hu , Chi-Ta Lu , Chi-Ming Tsai
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee Address: TW Hsinchu
- Agency: WPAT, P.C., Intellectual Property Attorneys
- Agent Anthony King
- Main IPC: G03F1/70
- IPC: G03F1/70 ; G06F30/398

Abstract:
A method for manufacturing a semiconductor device is provided. The method includes providing a first layout including a plurality of first features and a second layout including a plurality of second features; shifting the second layout to generate a plurality of virtual layouts; comparing a score of each of the plurality of virtual layouts and determining a modified second layout having a target score out of the plurality of virtual layouts; and outputting the modified second layout to a photomask.
Public/Granted literature
- US20210116804A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2021-04-22
Information query
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