Invention Grant
- Patent Title: Method of manufacturing semiconductor devices
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Application No.: US17129847Application Date: 2020-12-21
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Publication No.: US11430699B2Publication Date: 2022-08-30
- Inventor: Ling-Yen Yeh , Carlos H. Diaz , Wilman Tsai
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: McDermott Will & Emery LLP
- Main IPC: H01L21/8234
- IPC: H01L21/8234 ; H01L21/02 ; H01L21/324 ; H01L29/66 ; H01L21/28 ; H01L29/78
Abstract:
In a method of manufacturing a circuit including a MOSFET disposed in a MOSFET region and a negative capacitance FET (NCFET) disposed in a NCFET region, a dielectric layer is formed over a channel layer in the MOSFET region and the NCFET region. A first metallic layer is formed over the dielectric layer in the MOSFET region and the NCFET region. After the first metallic layer is formed, an annealing operation is performed only in the NCFET region. After the annealing operation, the first metallic layer is removed from the MOSFET region and the NCFET region. The annealing operation includes irradiating the first metallic layer and the dielectric layer in the NCFET region with an energy beam.
Public/Granted literature
- US20210183708A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES Public/Granted day:2021-06-17
Information query
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