Invention Grant
- Patent Title: Semiconductor device
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Application No.: US17389636Application Date: 2021-07-30
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Publication No.: US11430709B2Publication Date: 2022-08-30
- Inventor: Shuliang Ning
- Applicant: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Applicant Address: CN Hefei
- Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Current Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Current Assignee Address: CN Hefei
- Agency: Cooper Legal Group, LLC
- Priority: CN202010689795.7 20200717
- Main IPC: H01L23/34
- IPC: H01L23/34 ; H01L25/065 ; G11C5/04 ; G11C7/04 ; G11C11/406

Abstract:
A semiconductor device is provided, including multiple memory chips and a temperature detection module. The temperature detection circuit includes: multiple temperature sensitive units, arranged on the memory chips to detect temperatures of the memory chips; and a processing unit. The multiple temperature sensitive units share the processing unit with each other. The processing unit is configured to process a signal of at least one of the temperature sensitive units. The processing unit includes a calibration value memory cell and a calibration unit. The calibration value memory cell is configured to store a calibration value corresponding to the temperature sensitive unit. The calibration unit is configured to calibrate the temperature sensitive unit according to the calibration value.
Public/Granted literature
- US20220020657A1 SEMICONDUCTOR DEVICE Public/Granted day:2022-01-20
Information query
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