Invention Grant
- Patent Title: Filling member between a heat sink and substrate
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Application No.: US17166418Application Date: 2021-02-03
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Publication No.: US11430712B2Publication Date: 2022-08-30
- Inventor: Junya Ikeda , Yoshihiro Nakata
- Applicant: FUJITSU LIMITED
- Applicant Address: JP Kawasaki
- Assignee: FUJITSU LIMITED
- Current Assignee: FUJITSU LIMITED
- Current Assignee Address: JP Kawasaki
- Agency: Fujitsu Patent Center
- Priority: JPJP2020-043471 20200312
- Main IPC: H01L29/40
- IPC: H01L29/40 ; H01L23/12 ; H01L23/48 ; H01L21/00 ; H05K7/20 ; H01L23/373 ; H01L23/367 ; H01L23/31 ; H01L23/498 ; H01L21/56 ; H01L21/768 ; H01L21/48 ; H01L23/00 ; H01L25/065 ; H01L23/538 ; H01L23/522

Abstract:
A semiconductor device includes: a semiconductor substrate; an electrode pad disposed over a first face of the semiconductor substrate; a redistribution layer electrically connected to the electrode pad; a through hole disposed in the semiconductor substrate so as to extend from a second face opposite to the first face of the semiconductor substrate to the electrode pad; an electrically conductive film covering an inner wall of the through hole, and electrically connected to the electrode pad; an electrically conductive adhesive disposed on a side of the second face of the semiconductor substrate, and electrically connected to the electrode pad via the electrically conductive film; a heat radiating member bonded to the second face of the semiconductor substrate with the electrically conductive adhesive; and a filling member with which the through hole is filled, the filling member being lower in coefficient of thermal expansion than the electrically conductive adhesive.
Public/Granted literature
- US20210287961A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE Public/Granted day:2021-09-16
Information query
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