Invention Grant
- Patent Title: Semiconductor device and method of fabricating the same
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Application No.: US17028855Application Date: 2020-09-22
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Publication No.: US11430779B2Publication Date: 2022-08-30
- Inventor: Jaewan Yang , Wootae Kim , Hyungock Kim , Sangdo Park , Jun Seomun
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Myers Bigel, P.A.
- Priority: KR10-2019-0139770 20191104,KR10-2020-0052247 20200429
- Main IPC: H01L27/02
- IPC: H01L27/02 ; H01L21/768 ; H01L27/088 ; H01L23/522

Abstract:
Disclosed are a semiconductor device and a method of fabricating the same. The method includes placing a standard cell, resizing a power via pattern in such a way that the power via pattern has a different width from a width of other via pattern, and applying different design rules to the power via pattern and the other via pattern, respectively, to perform a routing operation on the standard cell.
Public/Granted literature
- US20210134785A1 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME Public/Granted day:2021-05-06
Information query
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