Three-dimensional (3D) memory devices and methods for forming the same are provided. In an example, a method for forming a 3D memory device includes forming a first semiconductor structure including a peripheral circuit, a data processing circuit, and a first bonding layer including a plurality of first bonding contacts. The method also includes forming a second semiconductor structure including an array of 3D NAND memory strings and a second bonding layer including a plurality of second bonding contacts. The method further includes bonding the first semiconductor structure and the second semiconductor structure in a face-to-face manner, such that the first bonding contacts are in contact with the second bonding contacts at a bonding interface.